10 September 2014 Graphene nano-objects tailored by interference lithography
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We propose a facile approach to fabricate graphene nano-objects (GNOs) using interference lithography (IL) and direct self-assembly of nanoparticles. Uniformly spaced parallel photoresist (PR) lines and periodic hole arrays are proposed as an etch mask for producing graphene nanoribbons (GNRs), and graphene nanomesh (GNM), respectively. In a different experiment, the PR line arrays are transferred to uniform oxide channels, and silica nanoparticle dispersions with an average size of 10 nm are spun on the patterned surface, leaving a monolayer uniform nanoparticle assembly on the graphene. Following the particle deposition, the graphene is removed in the narrow spacing between the particles, using the O2 plasma etch, leaving ordered graphene quantum dot (GQD) arrays. The IL technique and etch process enables tuning the GNOs dimensions.
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Alireza Kazemi, Alireza Kazemi, Xiang He, Xiang He, Javad Ghasemi, Javad Ghasemi, Seyed Hamidreza Alaie, Seyed Hamidreza Alaie, Noel Mayur Dawson, Noel Mayur Dawson, Brianna Klein, Brianna Klein, Karissa Kiesow, Karissa Kiesow, Douglas Wozniak, Douglas Wozniak, Terefe Habteyes, Terefe Habteyes, Steven R. J. Brueck, Steven R. J. Brueck, Sanjay Krishna, Sanjay Krishna, "Graphene nano-objects tailored by interference lithography", Proc. SPIE 9168, Carbon Nanotubes, Graphene, and Associated Devices VII, 91680B (10 September 2014); doi: 10.1117/12.2060003; https://doi.org/10.1117/12.2060003

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