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10 September 2014 Formation of Fabry-Perot cavity in one-dimensional and two-dimensional GaAs nanostructures
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We report formation of an optical cavity and observation of Fabry-Perot resonance in GaAs nanowires and nanosheets grown by metal organic chemical vapor deposition (MOCVD) with selective area growth (SAG). These nanostructures are grown along the (111)B direction. The formation of an optical cavity in the nanowires and nanosheets are fundamentally different from each other. In nanowires the optical cavity is formed along the length of the nanowire with ends of the nanowire behaving as two parallel mirrors. In nanosheets, however, the three non-parallel edges of the GaAs nanosheets are involved in trapping of the light through total internal reflection, thus forming a 2D cavity. We show that through surface passivation and local field enhancement, both the photoluminescence intensity and hence Fabry-Perot peak intensity increases significantly. Transferring the GaAs nanowires and nanosheets to the gold substrate (instead of Si/SiO2 substrate) leads to substantial enhancement in the photoluminescence intensity by 5X (for nanowires) and 3.7X (for nanosheets) to infinite enhancement of the FP peaks intensities. In order to reduce the non-radiative recombination in these nanowires the surface states in the nanowires can be passivated by either an ionic liquid (EMIM-TFSI) or an AlGaAs surface layer. Both passivations methods lead to an enhancement of the optical response by up to 12X.
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Shermin Arab, Maoqing Yao, ChunYung Chi, Chongwu Zhou, P. Daniel Dapkus, and Stephen B. Cronin "Formation of Fabry-Perot cavity in one-dimensional and two-dimensional GaAs nanostructures", Proc. SPIE 9168, Carbon Nanotubes, Graphene, and Associated Devices VII, 91680C (10 September 2014);

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