28 August 2014 High-sensitivity silicon nanowire phototransistors
Author Affiliations +
Abstract
Silicon nanowires (SiNWs) have emerged as a promising material for high-sensitivity photodetection in the UV, visible and near-infrared spectral ranges. In this work, we demonstrate novel planar SiNW phototransistors on silicon-oninsulator (SOI) substrate using CMOS-compatible processes. The device consists of a bipolar transistor structure with an optically-injected base region. The electronic and optical properties of the SiNW phototransistors are investigated. Preliminary simulation and experimental results show that nanowire geometry, doping densities and surface states have considerable effects on the device performance, and that a device with optimized parameters can potentially outperform conventional Si photodetectors.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Siew Li Tan, Siew Li Tan, Xingyan Zhao, Xingyan Zhao, Yaping Dan, Yaping Dan, } "High-sensitivity silicon nanowire phototransistors", Proc. SPIE 9170, Nanoengineering: Fabrication, Properties, Optics, and Devices XI, 917002 (28 August 2014); doi: 10.1117/12.2061190; https://doi.org/10.1117/12.2061190
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT


Back to Top