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28 August 2014Heterojunction of nano-poly (O-toluidine) on silicon nanowires is investigated as a candidate heterojunction diode
The organic nanostructured conducting polymer Poly (O-toluidine)/ Silicon
nanowires (NPOT/SiNWs) heterojunction is investigated as a candidate heterojunction diode.
For this purpose, NPOT/SiNWs heterojunction was fabricated through low cost and simple
techniques. SiNWs were fabricated using improved metal-assisted electroless etching of Si
substrates. NPOT thin film was chemically fabricated via in situ polymerization method. The
morphology of SiNWs before and after deposition of NPOT was confirmed by scanning electron
microscope (SEM). I-V measurements of the device were made at room temperature under dark
conditions.
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Salah E. El-Zohary, M. A. Shenashen, Akinori Tsuji, T. Okamoto, M. Haraguchi, "Heterojunction of nano-poly (O-toluidine) on silicon nanowires is investigated as a candidate heterojunction diode," Proc. SPIE 9170, Nanoengineering: Fabrication, Properties, Optics, and Devices XI, 917006 (28 August 2014); https://doi.org/10.1117/12.2062687