Heterojunction of nano-poly (O-toluidine) on silicon nanowires is investigated as a candidate heterojunction diode

Salah E. El-Zohary; M. A. Shenashen; Akinori Tsuji; T. Okamoto; M. Haraguchi

doi:10.1117/12.2062687

28 August 2014 Heterojunction of nano-poly (O-toluidine) on silicon nanowires is investigated as a candidate heterojunction diode

Salah E. El-Zohary; M. A. Shenashen; Akinori Tsuji; T. Okamoto; M. Haraguchi

Author Affiliations +

Proceedings Volume 9170, Nanoengineering: Fabrication, Properties, Optics, and Devices XI; 917006 (2014) https://doi.org/10.1117/12.2062687
Event: SPIE NanoScience + Engineering, 2014, San Diego, California, United States

Abstract

The organic nanostructured conducting polymer Poly (O-toluidine)/ Silicon nanowires (NPOT/SiNWs) heterojunction is investigated as a candidate heterojunction diode. For this purpose, NPOT/SiNWs heterojunction was fabricated through low cost and simple techniques. SiNWs were fabricated using improved metal-assisted electroless etching of Si substrates. NPOT thin film was chemically fabricated via in situ polymerization method. The morphology of SiNWs before and after deposition of NPOT was confirmed by scanning electron microscope (SEM). I-V measurements of the device were made at room temperature under dark conditions.

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Salah E. El-Zohary, Salah E. El-Zohary, M. A. Shenashen, M. A. Shenashen, Akinori Tsuji, Akinori Tsuji, T. Okamoto, T. Okamoto, M. Haraguchi, M. Haraguchi, } "Heterojunction of nano-poly (O-toluidine) on silicon nanowires is investigated as a candidate heterojunction diode", Proc. SPIE 9170, Nanoengineering: Fabrication, Properties, Optics, and Devices XI, 917006 (28 August 2014); doi: 10.1117/12.2062687; https://doi.org/10.1117/12.2062687

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