28 August 2014 Characteristic temperature analysis for PbSe/PbSrSe multiple quantum well structure
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The characteristic temperature calculations and dependency on cavity length was analyzed for Pb0.934Sr0.066 Se multiple Quantum well Structure at three temperature ranges 77<T<150 K, 150<T<300 K, and 77<T<300 K. In this work, we show the behavior of the characteristic temperature as a function of cavity length and were able to best fit the data to a second degree polynomial. Inclusion of theoretical values for the quantum efficiency due to Auger recombination reduces the characteristic temperature T0 in these ranges. It was found that inclusion of the quantum efficiency decreases the characteristic temperature by a factor of 0.6 for a wide range of cavity lengths. When results were compared to experimental data, it was concluded that there is a leakage current above the barrier due to thermionic emission. The leakage current density was estimated to be around 5423 A/cm2 at room temperature. With this high value more work is needed to understand the thermionic emission process to improve on the performance of this material system and similar ones.
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M. Khodr, M. Khodr, "Characteristic temperature analysis for PbSe/PbSrSe multiple quantum well structure", Proc. SPIE 9170, Nanoengineering: Fabrication, Properties, Optics, and Devices XI, 917008 (28 August 2014); doi: 10.1117/12.2055688; https://doi.org/10.1117/12.2055688


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