Surface potential and field effect in structures with Ge-nanoclusters grown on Si(100) surface

Yu. V. Hyrka; S. V. Kondratenko

doi:10.1117/12.2061093

28 August 2014 Surface potential and field effect in structures with Ge-nanoclusters grown on Si(100) surface

Yu. V. Hyrka, S. V. Kondratenko

Proceedings Volume 9170, Nanoengineering: Fabrication, Properties, Optics, and Devices XI; 91701C (2014) https://doi.org/10.1117/12.2061093
Event: SPIE NanoScience + Engineering, 2014, San Diego, California, United States

Abstract

The structures consisting of Ge-nanoclusters grown on silicon oxide layer are promising candidates for optoelectronics as well as for nonvolatile memory circuits . This is due to their infrared photoluminescent and photoconductive properties. Crystalline germanium nanoclusters (NCs) are grown by a molecular-beam epitaxy technique on chemically oxidized Si(100) surface at 700°C. It was shown that structures with Ge-nanoclusters, grown on silicon surface characterized by fluctuations of the electrostatic field, that determined of positive charge trapped by dimensional quantum states Ge nanoclusters and Ge-nanoclusters/Si interface traps. Field effect on lateral conductivity and photovoltage spectra in Ge-nanostructures were analized.

Citation Download Citation

Yu. V. Hyrka and S. V. Kondratenko "Surface potential and field effect in structures with Ge-nanoclusters grown on Si(100) surface", Proc. SPIE 9170, Nanoengineering: Fabrication, Properties, Optics, and Devices XI, 91701C (28 August 2014); https://doi.org/10.1117/12.2061093

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