27 August 2014 The effect of the substrate temperature and the acceleration potential drop on the structural and physical properties of SiC thin films deposed by TVA method
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Abstract
Crystalline Si-C thin films were prepared at substrate temperature between 200°C and 1000°C using Thermionic Vacuum Arc (TVA) method. To increase the acceleration potential drop a negative bias voltage up to -1000V was applied on the substrate. The 200nm thickness carbon thin films was deposed on glass and Si substrate and then 200-500 nm thickness Si-C layer on carbon thin films was deposed. Transmission Electron Microscopy (TEM), High Resolution Transmission Electron Microscopy (HRTEM), X-Ray Photoelectron Spectroscopy (XPS), and electrical conductivity measurement technique characterized the structure and physical characteristics of as-prepared SiC coating. At a constant acceleration potential drop, the electrical conductivity of the Si-C films deposed on C, increase with increasing of substrate temperature. On the other part, significant increases in the acceleration potential drop at constant substrate temperature lead to a variation of the crystallinity and electrical conductivity of the SiC coatings XPS analysis was performed using a Quantera SXM equipment, with monochromatic AlKα radiation at 1486.6eV. Electrical conductivity of the Si-C coating on carbon at different temperatures was measured comparing the potential drop on the sample with the potential drop on a series standard resistance in constant mode.
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Victor Ciupina, Victor Ciupina, Cristian P. Lungu, Cristian P. Lungu, Rodica Vladoiu, Rodica Vladoiu, Gabriel C. Prodan, Gabriel C. Prodan, Stefan Antohe, Stefan Antohe, Corneliu Porosnicu, Corneliu Porosnicu, Iuliana Stanescu, Iuliana Stanescu, Ionut Jepu, Ionut Jepu, Sorina Iftimie, Sorina Iftimie, Madalina Prodan, Madalina Prodan, Aurelia Mandes, Aurelia Mandes, Virginia Dinca, Virginia Dinca, Eugeniu Vasile, Eugeniu Vasile, Valeriu Zarovski, Valeriu Zarovski, Virginia Nicolescu, Virginia Nicolescu, } "The effect of the substrate temperature and the acceleration potential drop on the structural and physical properties of SiC thin films deposed by TVA method", Proc. SPIE 9172, Nanostructured Thin Films VII, 91720Y (27 August 2014); doi: 10.1117/12.2061186; https://doi.org/10.1117/12.2061186
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