17 August 2014 Nanoprobe electrical measurements of single nanowire structures (presentation video)
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Abstract
In-place measurement of semiconductor nanowires can be achieved using a nanoprobe inside a scanning electron microscope. Gold catalyzed vapour-liquid-solid nanowires exhibit a highly perfect metal semiconductor interface which is generally rectifying for moderate to low doping values. The electrical properties of the semiconducting region can be inferred from careful attention to the IV properties in a rapid measurement process involving no lithography or sidewall degradation. The technique is useful for evaluating the effect of surface states on the nanowire conductivity. We present initial results on the epitaxy and electrical characterization of core-shell p-n junction structures using the nanoprobe method.
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Simon Watkins, "Nanoprobe electrical measurements of single nanowire structures (presentation video)", Proc. SPIE 9174, Nanoepitaxy: Materials and Devices VI, 917403 (17 August 2014); doi: 10.1117/12.2065265; https://doi.org/10.1117/12.2065265
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