16 September 2014 Silicon epitaxy in nanoscale for photovoltaic applications
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Abstract
Nanostructures provide novel opportunities of studying epitaxy in nano/mesoscale and on nonplanar substrates. Epitaxial growth of silicon (Si) on the surfaces of Si nanowires along radial direction is a promising way to prepare radial p-(i)-n junction in nanoscale for optoelectronic devices. Comprehensive studies of Si radial epitaxy in micro/nanoscale reveal that morphological evolution and size-dependent radial shell growth rate for undoped and doped Si radial shells. Single crystalline Si radial p-i-n junction wire arrays were utilized to fabricate photovoltaic (PV) devices. The PV devices exhibited the photoconversion efficiency of 10%, the short-circuit current density of 39 mA/cm2, and the open-circuit voltage of 0.52 V, respectively.
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Jinkyoung Yoo, Jinkyoung Yoo, Binh-Minh Nguyen, Binh-Minh Nguyen, Shadi A. Dayeh, Shadi A. Dayeh, Paul Schuele, Paul Schuele, David Evans, David Evans, S. T. Picraux, S. T. Picraux, } "Silicon epitaxy in nanoscale for photovoltaic applications", Proc. SPIE 9174, Nanoepitaxy: Materials and Devices VI, 917407 (16 September 2014); doi: 10.1117/12.2065696; https://doi.org/10.1117/12.2065696
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