16 September 2014 Silicon epitaxy in nanoscale for photovoltaic applications
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Abstract
Nanostructures provide novel opportunities of studying epitaxy in nano/mesoscale and on nonplanar substrates. Epitaxial growth of silicon (Si) on the surfaces of Si nanowires along radial direction is a promising way to prepare radial p-(i)-n junction in nanoscale for optoelectronic devices. Comprehensive studies of Si radial epitaxy in micro/nanoscale reveal that morphological evolution and size-dependent radial shell growth rate for undoped and doped Si radial shells. Single crystalline Si radial p-i-n junction wire arrays were utilized to fabricate photovoltaic (PV) devices. The PV devices exhibited the photoconversion efficiency of 10%, the short-circuit current density of 39 mA/cm2, and the open-circuit voltage of 0.52 V, respectively.
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Jinkyoung Yoo, Jinkyoung Yoo, Binh-Minh Nguyen, Binh-Minh Nguyen, Shadi A. Dayeh, Shadi A. Dayeh, Paul Schuele, Paul Schuele, David Evans, David Evans, S. T. Picraux, S. T. Picraux, "Silicon epitaxy in nanoscale for photovoltaic applications", Proc. SPIE 9174, Nanoepitaxy: Materials and Devices VI, 917407 (16 September 2014); doi: 10.1117/12.2065696; https://doi.org/10.1117/12.2065696
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