16 September 2014 Magnetic doping of Ge-quantum dots: growth studies exploring the feasibility of modulating QD properties
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The magnetic doping of Ge-QDs is highly coveted and has been pursued for several years. The Ge- Mn-Si substrate system presents a complex challenge, and the competition between dopant integration and formation of silicides, germanides and metastable phases makes the magnetic doping a considerable, and maybe insurmountable challenge. We will discuss the interaction of Mn with all growth surface, Si(100), Ge(100) wetting layer, and Ge{105} QD facet, as well as the co-deposition of Mn and Ge. The monoatomic Mn-wires, which form on Si(100), and their magnetic signatures allow unique insight into the relation between bonding and magnetism. We will close with an outlook on the feasibility of QD manipulation by controlling dopant-surface interactions.
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Christopher A. Nolph, Christopher A. Nolph, Kiril R. Simov, Kiril R. Simov, Gopalakrishnan Ramalingam, Gopalakrishnan Ramalingam, Petra Reinke, Petra Reinke, } "Magnetic doping of Ge-quantum dots: growth studies exploring the feasibility of modulating QD properties", Proc. SPIE 9174, Nanoepitaxy: Materials and Devices VI, 91740O (16 September 2014); doi: 10.1117/12.2062487; https://doi.org/10.1117/12.2062487


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