7 October 2014 Influence of substrates on formation of polycrystalline silicon nanowire films
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Abstract
Polycrystalline silicon nanowires (poly-SiNWs) films were successfully prepared by using metal assisted chemical etching of polycrystalline silicon (poly-Si) films. The poly-Si films were prepared by solid-phase crystallization of amorphous silicon (a-Si) deposited by different deposition techniques on different substrates. In the case of the electron beam evaporated a-Si on a quartz substrate, the formation of poly-SiNWs was not observed and the structure was found to be porous silicon. On the other hand, poly-SiNWs successfully formed from poly-Si on a silicon substrate. We also found that deposition techniques for a-Si films affect the formation of poly-SiNWs.
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Shinya Kato, Tatsuya Yamazaki, Shinsuke Miyajima, Makoto Konagai, "Influence of substrates on formation of polycrystalline silicon nanowire films", Proc. SPIE 9178, Next Generation Technologies for Solar Energy Conversion V, 91780M (7 October 2014); doi: 10.1117/12.2061471; https://doi.org/10.1117/12.2061471
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