7 October 2014 Influence of substrates on formation of polycrystalline silicon nanowire films
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Abstract
Polycrystalline silicon nanowires (poly-SiNWs) films were successfully prepared by using metal assisted chemical etching of polycrystalline silicon (poly-Si) films. The poly-Si films were prepared by solid-phase crystallization of amorphous silicon (a-Si) deposited by different deposition techniques on different substrates. In the case of the electron beam evaporated a-Si on a quartz substrate, the formation of poly-SiNWs was not observed and the structure was found to be porous silicon. On the other hand, poly-SiNWs successfully formed from poly-Si on a silicon substrate. We also found that deposition techniques for a-Si films affect the formation of poly-SiNWs.
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Shinya Kato, Shinya Kato, Tatsuya Yamazaki, Tatsuya Yamazaki, Shinsuke Miyajima, Shinsuke Miyajima, Makoto Konagai, Makoto Konagai, } "Influence of substrates on formation of polycrystalline silicon nanowire films", Proc. SPIE 9178, Next Generation Technologies for Solar Energy Conversion V, 91780M (7 October 2014); doi: 10.1117/12.2061471; https://doi.org/10.1117/12.2061471
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