7 October 2014 Properties of Si/SiO2 superlattice nanodisc array prepared by nanosphere lithography
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Abstract
We fabricated nanostructured Si/SiO2 superlattice films for solar cell appliactions. The Si/SiO2 superlattice films were fabricated by thermal annealing of a-Si/SiO2 superlattice films. TEM observations revealed the existence of nanocrystalline Si in the Si layer. This sample showed photoluminescence spectrum with peak energy at around 1.5 eV. It was also found that the defect density in the superlattice was reduced by using forming gas annealing. Applying nanosphere lithography and reactive ion etching, we successfully prepared nanostructures on the surface of the superlattice. We also compared the optical properties with the simulation results using rigorous coupled wave analysis.
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Takaya Higa, Takaya Higa, Ryousuke Ishikawa, Ryousuke Ishikawa, Shinsuke Miyajima, Shinsuke Miyajima, Makoto Konagai, Makoto Konagai, } "Properties of Si/SiO2 superlattice nanodisc array prepared by nanosphere lithography", Proc. SPIE 9178, Next Generation Technologies for Solar Energy Conversion V, 91780P (7 October 2014); doi: 10.1117/12.2061472; https://doi.org/10.1117/12.2061472
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