20 November 2014 Sn halide based perovskite sensitized solar cells covering up to 1060 nm (presentation video)
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Abstract
We have succeeded in harvesting energy in the NIR region by using Sn halide based perovskite materials. The cell has the following composition: F-doped SnO2 layered glass/compact titania layer/porous titania layer/Sn based perovskite material/ p-type polymer semiconductor. The edge of the incident photon to current efficiency (IPCE) edge reached 1040 nm. 4.18 % efficiency with open circuit efficiency (Voc):0.42 V, fill factor (FF): 0.5, short circuit current (Jsc): 20.04 mA/cm2 is reported.
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Yuhei Ogomi, Yuhei Ogomi, Atsushi Morita, Atsushi Morita, Shota Tsukamoto, Shota Tsukamoto, Takahiro Saito, Takahiro Saito, Naotaka Fujikawa, Naotaka Fujikawa, Shen Qing, Shen Qing, Taro Toyoda, Taro Toyoda, Kenji Yoshino, Kenji Yoshino, Shyam S. Pandey, Shyam S. Pandey, Tingli Ma, Tingli Ma, Shuzi Shuzi Hayase, Shuzi Shuzi Hayase, } "Sn halide based perovskite sensitized solar cells covering up to 1060 nm (presentation video)", Proc. SPIE 9184, Organic Photovoltaics XV, 91840S (20 November 2014); doi: 10.1117/12.2061065; https://doi.org/10.1117/12.2061065
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