7 October 2014 Study of the improvements in the electrical performance of solution-processed metal oxide thin-film transistors using self-assembled monolayers
Author Affiliations +
Abstract
Thin-film transistors (TFTs) of a metal oxide semiconductor typically are transparent and have high mobility to be paid attention for back plane of displays. One of the most actively studied fabrication methods of metal oxide semiconductors is the solution processing (sol-gel) method, owing to its low-cost, simple and fast steps that ensure good product uniformity, and applicability to roll-to-roll processing. Our study focused on probing the electronic properties of solution-processed metal oxide TFTs. We have calculated the density of state (DOS) with monochromatic photonic capacitance-voltage (MPCV) measurements. Improvements in device are proved by electronic and photo-electronic methods.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jin-Woo Park, Hyungjoong Kim, Dae Hwan Kim, Mijung Lee, "Study of the improvements in the electrical performance of solution-processed metal oxide thin-film transistors using self-assembled monolayers", Proc. SPIE 9185, Organic Field-Effect Transistors XIII; and Organic Semiconductors in Sensors and Bioelectronics VII, 91850M (7 October 2014); doi: 10.1117/12.2061706; https://doi.org/10.1117/12.2061706
PROCEEDINGS
6 PAGES


SHARE
Back to Top