7 October 2014 Nonvolatile organic transistor memory devices based on nanostructured polymeric materials
Author Affiliations +
Abstract
We report the characteristics of ferroelectric field effect transistor (FeFET) nonvolatile flash memory devices using aligned P(VDF-TrFE) electrospun nanofibers as the dielectric layer. These FeFET devices showed reliable memory behaviors and memory window proportional to the quantity of aligned nanofibers containing the ferroelectric β-phase crystalline domain. Moreover, the FeFET devices using nanofibers exhibited the long-term stability in the data retention larger than 104 s with the ON/OFF ratio of ~103, and the multiple switching operation stability up to 100 cycles.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mau-Shen Lu, Mau-Shen Lu, Chien Lu, Chien Lu, Meng-Hsien Li, Meng-Hsien Li, Cheng-Liang Liu, Cheng-Liang Liu, Wen-Chang Chen, Wen-Chang Chen, } "Nonvolatile organic transistor memory devices based on nanostructured polymeric materials", Proc. SPIE 9185, Organic Field-Effect Transistors XIII; and Organic Semiconductors in Sensors and Bioelectronics VII, 91850N (7 October 2014); doi: 10.1117/12.2059165; https://doi.org/10.1117/12.2059165
PROCEEDINGS
11 PAGES


SHARE
Back to Top