7 October 2014 Nonvolatile organic transistor memory devices based on nanostructured polymeric materials
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We report the characteristics of ferroelectric field effect transistor (FeFET) nonvolatile flash memory devices using aligned P(VDF-TrFE) electrospun nanofibers as the dielectric layer. These FeFET devices showed reliable memory behaviors and memory window proportional to the quantity of aligned nanofibers containing the ferroelectric β-phase crystalline domain. Moreover, the FeFET devices using nanofibers exhibited the long-term stability in the data retention larger than 104 s with the ON/OFF ratio of ~103, and the multiple switching operation stability up to 100 cycles.
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Mau-Shen Lu, Mau-Shen Lu, Chien Lu, Chien Lu, Meng-Hsien Li, Meng-Hsien Li, Cheng-Liang Liu, Cheng-Liang Liu, Wen-Chang Chen, Wen-Chang Chen, } "Nonvolatile organic transistor memory devices based on nanostructured polymeric materials", Proc. SPIE 9185, Organic Field-Effect Transistors XIII; and Organic Semiconductors in Sensors and Bioelectronics VII, 91850N (7 October 2014); doi: 10.1117/12.2059165; https://doi.org/10.1117/12.2059165

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