20 November 2014 Highly stretchable polymer transistors consisting entirely of stretchable device components (presentation video)
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Abstract
The fabrication of stretchable devices has been explored via two approaches: wavy design of non-stretchable materials or elastomeric electronic materials. The first approach has been widely used, specifically led by Rogers group. The second approach requests stretchability of all the device components, hence there have been no reports on the fabrication of semiconducting polymer-based stretchable transistors due to the lack of stretchable active layer and dielectric. This presentation deals with the fabrication of an array of highly stretchable polymer transistors made entirely of stretchable components. The transistors were constructed of stretchable Au nanosheet electrodes, polyelectrolyte gel for the gate dielectric, metal nanowires for the circuit, and nanofibril-based stretchable channel materials. This talk will present the issues of the components regarding with the stretchability and mechanical performance.
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Unyong Jeong, "Highly stretchable polymer transistors consisting entirely of stretchable device components (presentation video)", Proc. SPIE 9185, Organic Field-Effect Transistors XIII; and Organic Semiconductors in Sensors and Bioelectronics VII, 91850W (20 November 2014); doi: 10.1117/12.2062420; https://doi.org/10.1117/12.2062420
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