7 October 2014 Organic field-effect transistor circuits with electrode interconnections using reverse stamping
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Abstract
We discuss a non-vacuum low-cost reverse stamping method for the realization of circuits based on top-gate organic field-effect transistors (OFETs) with a bi-layer gate dielectric. This method allows for patterning of high-k inorganic dielectric films produced by atomic layer deposition and consequently of the bilayer gate dielectric layers used in our top-gate OFETs. We demonstrate the fabrication and operation of logic inverters and ring oscillators following this approach.
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Sangmoo Choi, Sangmoo Choi, Canek Fuentes-Hernandez, Canek Fuentes-Hernandez, Minseong Yun, Minseong Yun, Amir Dindar, Amir Dindar, Talha M. Khan, Talha M. Khan, Cheng-Yin Wang, Cheng-Yin Wang, Bernard Kippelen, Bernard Kippelen, } "Organic field-effect transistor circuits with electrode interconnections using reverse stamping", Proc. SPIE 9185, Organic Field-Effect Transistors XIII; and Organic Semiconductors in Sensors and Bioelectronics VII, 918511 (7 October 2014); doi: 10.1117/12.2060602; https://doi.org/10.1117/12.2060602
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