Polymeric gated organic field effect transistor using magnesium phthalocyanine

Rajesh K. R.; Menon C. S.

doi:10.1117/12.2062672

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7 October 2014 Polymeric gated organic field effect transistor using magnesium phthalocyanine

Rajesh K. R., Menon C. S.

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Proceedings Volume 9185, Organic Field-Effect Transistors XIII; and Organic Semiconductors in Sensors and Bioelectronics VII; 918515 (2014) https://doi.org/10.1117/12.2062672
Event: SPIE Organic Photonics + Electronics, 2014, San Diego, California, United States

Abstract

An organic thin film transistor has been fabricated using evaporated Magnesium Phthalocyanine as active layer. Parylene film prepared by chemical vapour deposition has been used as the organic gate insulator. Annealing of the samples is performed at 120 °C for 3 hrs. At room temperature, these transistors exhibit the p-type conductivity with field-effect mobility ranging from 0.009 - 0.021 cm2/Vs and ( I on/I off) ratio ~10³. The effect of annealing on the transistor characteristics is discussed.

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Rajesh K. R. and Menon C. S. "Polymeric gated organic field effect transistor using magnesium phthalocyanine", Proc. SPIE 9185, Organic Field-Effect Transistors XIII; and Organic Semiconductors in Sensors and Bioelectronics VII, 918515 (7 October 2014); https://doi.org/10.1117/12.2062672

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