1 January 1988 I-Line Lithography Using A New Water-Soluble Contrast Enhancing Material
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Abstract
I-line lithography using contrast enhanced lithography (CEL) has been developed. With this technology, we used a newly-developed water-soluble contrast enhancing material. This material consists of p-morpholinobenzene diazonium chloride zinc chloride salt, poly(p-styrene sulfonic acid) and water. P-morpholinobenzene diazonium chloride zinc chloride salt's absorption peak is at around 365 nm. It also has high solubility in water and has excellent photobleaching characteristics. The poly(p-styrene sulfonic acid) as a matrix polymer prevents degradation of the diazonium salt in water, so it makes possible the long-term stability of the water-soluble contrast enhancing material. This lithography is capable of 0.5-μm pattern fabrication and it is convinced to be the major lithographic technology for 16 mega-bits DRAM production.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masayuki Endo, Masaru Sasago, Yoshihiko Hirai, Kazufumi Ogawa, Takeshi Ishihara, "I-Line Lithography Using A New Water-Soluble Contrast Enhancing Material", Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); doi: 10.1117/12.968306; https://doi.org/10.1117/12.968306
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