5 September 2014 The low-frequency Raman spectra and nanostructure of As-Se-S and As-Se-Te chalcogenide semiconductors doped by samarium
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Abstract
It has been established that the Raman scattering (RS) of chalcogenide glass–like semiconductors (CGS) materials As-Se-S and As-Se-Te at frequencies below 100 cm-1 consists of two parts: first - which the intensity with increasing frequency up to 30 ÷ 40 cm-1 decreases (quasi-elastic scattering); second - which have been observed a broad band with a maximum at frequencies of ~ 63 ÷ 67 cm-1 (boson peak - BP). Such a case is absent in the respective crystals. The observed features are associated with relaxation and excess density of states of acoustic vibrations in irregularities is localized with nanometer-size of material. It is shown that the contribution of the different types of scattering in a low-frequency range depends on the degree of disorder in the material, which varies with the change of chemical composition and by doping.
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G. A. Isayeva, G. A. Isayeva, R. I. Alekberov, R. I. Alekberov, S. I. Mekhtiyeva, S. I. Mekhtiyeva, A. I. Isayev, A. I. Isayev, } "The low-frequency Raman spectra and nanostructure of As-Se-S and As-Se-Te chalcogenide semiconductors doped by samarium", Proc. SPIE 9205, Reflection, Scattering, and Diffraction from Surfaces IV, 92050C (5 September 2014); doi: 10.1117/12.2060358; https://doi.org/10.1117/12.2060358
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