Paper
1 January 1988 Stepper Lens Characterization Using A Field Emission SEM
Mike Tipton, Marylyn Hoy Bennett, Jim Pollard, Jack Smith, Ricky Jackson
Author Affiliations +
Abstract
A method of stepper lens evaluation has been developed which utilizes a simple resolution test pattern of the type usually supplied with the stepper. Measurements are made using an automated field emission SEM equipped to perform whole wafer non-destructive critical dimension analysis. Measurement data on focus and sizing is then analyzed by a computer program easily run on a small personal computer. Information on reticle sizing errors and wafer flatness may also be included in the analysis to minimize errors.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mike Tipton, Marylyn Hoy Bennett, Jim Pollard, Jack Smith, and Ricky Jackson "Stepper Lens Characterization Using A Field Emission SEM", Proc. SPIE 0921, Integrated Circuit Metrology, Inspection, and Process Control II, (1 January 1988); https://doi.org/10.1117/12.968352
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KEYWORDS
Semiconducting wafers

Reticles

Monochromatic aberrations

Scanning electron microscopy

Software

Error analysis

Photoresist materials

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