10 September 2014 Mk x Nk gated CMOS imager
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Our paper will describe a recently designed Mk x Nk x 10 um pixel CMOS gated imager intended to be first employed at the LLNL National Ignition Facility (NIF). Fabrication involves stitching MxN 1024x1024x10 um pixel blocks together into a monolithic imager (where M = 1, 2, . .10 and N = 1, 2, . . 10). The imager has been designed for either NMOS or PMOS pixel fabrication using a base 0.18 um/3.3V CMOS process. Details behind the design are discussed with emphasis on a custom global reset feature which erases the imager of unwanted charge in ~1 us during the fusion ignition process followed by an exposure to obtain useful data. Performance data generated by prototype imagers designed similar to the Mk x Nk sensor is presented.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James Janesick, James Janesick, Tom Elliott, Tom Elliott, James Andrews, James Andrews, John Tower, John Tower, Perry Bell, Perry Bell, Alan Teruya, Alan Teruya, Joe Kimbrough, Joe Kimbrough, Jeanne Bishop, Jeanne Bishop, "Mk x Nk gated CMOS imager", Proc. SPIE 9211, Target Diagnostics Physics and Engineering for Inertial Confinement Fusion III, 921106 (10 September 2014); doi: 10.1117/12.2063524; https://doi.org/10.1117/12.2063524


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