5 September 2014 Chemical treatment of CdZnTe radiation detectors using hydrogen bromide and ammonium-based solutions
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Surface damages occur in Cadmium zinc telluride (CdZnTe) wafers for radiation detection devices during dicing and polishing. This often results in increased leakage current that limits the performance of the detector. An effective method of removing the surface damage and thus reducing the leakage current is through the use of chemical treatments. The effects discussed in this study include: chemical polishing with a mixture of hydrogen bromide solution followed by passivation with ammonium fluoride in a hydrogen peroxide solution. The effects on the current-voltage measurements and the spectral response were monitored over a 2-week period. X-ray photoelectron spectroscopy (XPS) was also obtained to observe the formation of chemical species on treated surfaces. The resistivity of the treated CdZnTe samples is on the order of 1010 ohm-cm. The current in the I-V measurements increased rapidly immediately following the chemical polishing and surface passivation, and decreased steadily afterwards. The spectral response showed that the 59.5-keV peak of Am-241 was stable in the same position over the test period.
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Ifechukwude O. Okwechime, Ifechukwude O. Okwechime, Stephen U. Egarievwe, Stephen U. Egarievwe, Anwar Hossain, Anwar Hossain, Zaveon M Hales, Zaveon M Hales, Alexander A. Egarievwe, Alexander A. Egarievwe, Ralph B. James, Ralph B. James, "Chemical treatment of CdZnTe radiation detectors using hydrogen bromide and ammonium-based solutions", Proc. SPIE 9213, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVI, 92130Y (5 September 2014); doi: 10.1117/12.2063067; https://doi.org/10.1117/12.2063067

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