5 September 2014 Mechanisms of the passage of dark currents through Cd(Zn)Te semi-insulating crystals
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We investigated the passage of dark currents through semi-insulating crystals of Cd(Zn)Te with weak n-type conductivity that are used widely as detectors of ionizing radiation. The crystals were grown from a tellurium solution melt at 800 оС by the zone-melting method, in which a polycrystalline rod in a quartz ampoule was moved through a zone heater at a rate of 2 mm per day. The synthesis of the rod was carried out at ~1150 оС. We determined the important electro-physical parameters of this semiconductor, using techniques based on a parallel study of the temperature dependence of current-voltage characteristics in both the ohmic and the space-charge-limited current regions. We established in these crystals the relationship between the energy levels and the concentrations of deep-level impurity states, responsible for dark conductivity and their usefulness as detectors.
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V. Sklyarchuk, V. Sklyarchuk, P. Fochuk, P. Fochuk, I. Rarenko, I. Rarenko, Z. Zakharuk, Z. Zakharuk, O. Sklyarchuk, O. Sklyarchuk, Ye. Nykoniuk, Ye. Nykoniuk, A. Rybka, A. Rybka, V. Kutny, V. Kutny, A. E. Bolotnikov, A. E. Bolotnikov, R. B. James, R. B. James, "Mechanisms of the passage of dark currents through Cd(Zn)Te semi-insulating crystals ", Proc. SPIE 9213, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVI, 92131G (5 September 2014); doi: 10.1117/12.2062754; https://doi.org/10.1117/12.2062754


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