5 September 2014 Purification of p-type CdTe crystals by thermal treatment
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Abstract
We studied the influence of prolonged thermal treatment on the concentration and the acceptor energy level positions in p-CdTe samples. We found that heating them at 720 K entails a decrease in the concentration of electrically active centers, i.e., a "self-cleaning" of the adverse effects of some contaminants. In samples wherein the conductivity was determined by the concentration of acceptors of the A1 type (EV + 0.03-0.05) eV, after heating it becomes controlled by a deeper acceptor of the A2 type (EV + 0.13-0.14) eV, and both the charge-carrier’s mobility and the ratio μр80/μр300 increase. This effect reflects the fact that during thermal treatment, the A1 acceptors and the compensating donors are removed from their electrically active positions, most likely due to their diffusion and trapping within the inclusions in the CdTe bulk, where they have little or no influence on carrier scattering and trapping.
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P. Fochuk, I. Rarenko, Z. Zakharuk, Ye. Nykoniuk, V. Shlyakhovyj, A. E. Bolotnikov, Ge Yang, R. B. James, "Purification of p-type CdTe crystals by thermal treatment", Proc. SPIE 9213, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVI, 92131H (5 September 2014); doi: 10.1117/12.2062763; https://doi.org/10.1117/12.2062763
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