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1 January 1988 A Submicron Lithography Process Using Philips I-Line Stepper
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Recent advances in lens design have pushed optical lithography well into the submicron domain which was once considered to belong to X-ray or E-beam lithography. Realisation of submicron design rules of a 1 Mbit memory has been possible at PHILIPS using an i-line lens (Zeiss 10-78-48) incorporated in internally developed stepper (Sire-3) using a single layer resist technology. This paper will give a schematic description of the stepper and describe the lens characteristics of the two in house systems. The stability of the steppers will be illustrated by means of system parameters which were monitored during a prolonged period. The resist process was characterised on accelerated pathfinder lots which were used to detect lithography related problems in an earlier phase and to determine machine and process latitudes. The results of this characterisation and implementation activity will be reported. Special attention was given to focus determination which proved to be very critical due to the lens characteristics and large chip-size. Finally the results obtained on the 1M SRAM device with 0.7 ium minimum geometry will be presented. Based on this work it appears that with proper planarization procedures for minimizing the topography problems, a 0.7 μm design rule is practical using single layer resist on this stepper.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guido van der Looij, Venkat Nagaswami, Peter Baltussen, Peter Hartog, Rene Vervoordeldonk, and Joost Moonen "A Submicron Lithography Process Using Philips I-Line Stepper", Proc. SPIE 0922, Optical/Laser Microlithography, (1 January 1988);

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