7 October 2014 Study on 512×128 pixels InGaAs near infrared focal plane arrays
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Abstract
It is well known that In0.53Ga0.47As epitaxial material is lattice-matched to InP substrate corresponding to the wavelength from 0.9μm to 1.7μm, which results to high quality material and good device characteristics at room temperature. In order to develop the near infrared multi-spectral imaging, 512×128 pixels InGaAs Near Infrared Focal Plane Arrays (FPAs) were studied. The n-InP/i-InGaAs/n-InP double hereto-structure epitaxial material was grown by MBE. The 512×128 back-illuminated planar InGaAs detector arrays were fabricated, including the improvement of passivation film, by grooving the diffusion masking layer, the P type electrode layer, In bump condition and so on. The photo-sensitive region has the diffusion area of 23×23μm2 and pixel pitch of 30×30μm2 . The 512×128 detector arrays were individually hybridized on readout integrated circuit(ROIC) by Indium bump based on flip-chip process to make focal plane arrays (FPAs). The ROIC is based on a capacitive trans-impedance amplifier with correlated double sampling and integrated while readout (IWR) mode with high readout velocity of every pixel resulting in low readout noise and high frame frequency. The average peak detectivity and the response non-uniformity of the FPAs are 1.63×1012 cmHz1/2/W and 5.9%, respectively. The power dissipation and frame frequency of the FPAs are about 180mW and 400Hz, respectively.
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Xue Li, Hengjing Tang, Songlei Huang, Xiumei Shao, Tao Li, Zhangcheng Huang, Haimei Gong, "Study on 512×128 pixels InGaAs near infrared focal plane arrays", Proc. SPIE 9220, Infrared Sensors, Devices, and Applications IV, 92200B (7 October 2014); doi: 10.1117/12.2060304; https://doi.org/10.1117/12.2060304
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