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7 October 2014 MWIR InAsSb FPA data and analysis
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Abstract
InAsSb material with a cutoff wavelength in the 5 μm range has been grown on GaAs substrates. The MWIR InAsSb detector arrays were fabricated and hybridized to a ROIC to permit measurement of the electrical and optical properties of detectors. Detector arrays were fabricated in a 1024 x 1024 format on an 18 μm pitch. A fanout was utilized to directly acquire data from a set of selected detectors without an intervening read out integrating circuit (ROIC). Variable temperature Jdark vs Vd measurements have been made with the dark current density ~ 10-5 A/cm2 at 150 K. The external QE measured using a narrow band filter centered at ~ 4 μm had values in the 65 – 70 % range. Since the detectors were illuminated through a GaAs substrate, which has a reflectance of 29%, the internal QE is greater than 90%. A 1024 x 1024 ROIC on an 18 μm pitch was also designed and fabricated to interface with the barrier detectors. The ROIC operates at 30 Hz frame rate and has a well capacity of 20.7 M electrons. QE at 150 K for a 1024 x 1024 detector array hybridized to a ROIC had a median D* at 150 K under a flux of 1.07 x 1015 ph/(cm2/s) was 1.2 x 1011 cm Hz1/2 /W. The NEdT was 44 mK and imagery was obtained at 150 K using an f/2.3 MWIR lens.
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E. Robinson, A. I. D'Souza, A. C. Ionescu, D. Okerlund, T. J. de Lyon, R. D. Rajavel, H. Sharifi, N. K. Dhar, P. S. Wijewarnasuriya, and C. Grein "MWIR InAsSb FPA data and analysis", Proc. SPIE 9220, Infrared Sensors, Devices, and Applications IV, 92200D (7 October 2014); https://doi.org/10.1117/12.2064665
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