17 September 2014 AlGaAsSb as a top cell material for InP-based triple-junction solar cells
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We report the design and fabrication of Al0.95Ga0.05As0.56Sb0.44/Al0.75Ga0.25As0.56Sb0.44 solar cell as a top cell for triple-junction cell grown on InP substrate. The digital alloy technique, capable to grow high quality materials with composition falling in miscibility gap, was employed to grow high quality Al(Ga)AsSb to realize Al(Ga)AsSb solar cells. A test Al0.95Ga0.05As0.56Sb0.44/Al0.75Ga0.25As0.56Sb0.44 cell grown by molecular beam epitaxy was fabricated and characterized. The measured energy conversion efficiency is up to 8.9% under simulated AM0 radiation for the Al0.95Ga0.05As0.56Sb0.44/Al0.75Ga0.25As0.56Sb0.44 cell without AR coating on cell surface.
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Yiqiao Chen, Yiqiao Chen, Aaron Moy, Aaron Moy, Wentao Lu, Wentao Lu, Kan Mi, Kan Mi, Peter P. Chow, Peter P. Chow, "AlGaAsSb as a top cell material for InP-based triple-junction solar cells", Proc. SPIE 9226, Nanophotonics and Macrophotonics for Space Environments VIII, 92260L (17 September 2014); doi: 10.1117/12.2062773; https://doi.org/10.1117/12.2062773

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