Effect of defects on III-V MWIR nBn detector performance

G. R. Savich; D. E. Sidor; X. Du; C. P. Morath; V. M. Cowan; G. W. Wicks

doi:10.1117/12.2064229

17 September 2014 Effect of defects on III-V MWIR nBn detector performance

G. R. Savich, D. E. Sidor, X. Du, C. P. Morath, V. M. Cowan, G. W. Wicks

Proceedings Volume 9226, Nanophotonics and Macrophotonics for Space Environments VIII; 92260R (2014) https://doi.org/10.1117/12.2064229
Event: SPIE Optical Engineering + Applications, 2014, San Diego, California, United States

Abstract

Under elevated defect concentrations, MWIR, III-V nBn detectors exhibit diffusion limited performance with elevated dark current densities. The resulting diffusion current is limited by the generation of carriers through defect states in the neutral n-type absorber and a dark current dependence on the defect density described by one of two limits, a short absorber or long absorber limit. This characteristic contrasts that exhibited by defect limited, conventional pn junction based photodiodes which exhibit performance limited by Shockley-Read-Hall generation in the depletion layer rather than diffusion based processes.

Citation Download Citation

G. R. Savich, D. E. Sidor, X. Du, C. P. Morath, V. M. Cowan, and G. W. Wicks "Effect of defects on III-V MWIR nBn detector performance", Proc. SPIE 9226, Nanophotonics and Macrophotonics for Space Environments VIII, 92260R (17 September 2014); https://doi.org/10.1117/12.2064229

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