17 September 2014 Effect of defects on III-V MWIR nBn detector performance
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Abstract
Under elevated defect concentrations, MWIR, III-V nBn detectors exhibit diffusion limited performance with elevated dark current densities. The resulting diffusion current is limited by the generation of carriers through defect states in the neutral n-type absorber and a dark current dependence on the defect density described by one of two limits, a short absorber or long absorber limit. This characteristic contrasts that exhibited by defect limited, conventional pn junction based photodiodes which exhibit performance limited by Shockley-Read-Hall generation in the depletion layer rather than diffusion based processes.
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G. R. Savich, D. E. Sidor, X. Du, C. P. Morath, V. M. Cowan, G. W. Wicks, "Effect of defects on III-V MWIR nBn detector performance", Proc. SPIE 9226, Nanophotonics and Macrophotonics for Space Environments VIII, 92260R (17 September 2014); doi: 10.1117/12.2064229; https://doi.org/10.1117/12.2064229
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