12 May 2014 Fabrication and characterization of epitaxial 4H-SiC pn junctions
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Proceedings Volume 9228, Optical Fibers and Their Applications 2014; 922804 (2014) https://doi.org/10.1117/12.2061287
Event: 15th Conference on Optical Fibers and Their Applications, 2014, Lipowy Most, Poland
This paper provides an overview of the process of 4H-SiC pn junction fabrication and characterization. The samples used in this study were fabricated in a resistively heated horizontal hot-wall Chemical Vapor Deposition reactor. The homo-epitaxial layers were grown on commercially available 4H-SiC substrates (Cree). In order to obtain p-type epilayers, they were intentionally doped with aluminum. In this work, we present our recently developed 4H-SiC pn junctions fabrication and characterization results. The ohmic contacts were formed using evaporation, etching, lift-off and high temperature annealing. Current-voltage characteristics of the devices were demonstrated.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrzej Kociubinski, Mariusz Duk, Dominika Teklinska, Norbert Kwietniewski, Mariusz Sochacki, Michal Borecki, "Fabrication and characterization of epitaxial 4H-SiC pn junctions", Proc. SPIE 9228, Optical Fibers and Their Applications 2014, 922804 (12 May 2014); doi: 10.1117/12.2061287; https://doi.org/10.1117/12.2061287


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