12 May 2014 Fabrication and characterization of epitaxial 4H-SiC pn junctions
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Proceedings Volume 9228, Optical Fibers and Their Applications 2014; 922804 (2014) https://doi.org/10.1117/12.2061287
Event: 15th Conference on Optical Fibers and Their Applications, 2014, Lipowy Most, Poland
Abstract
This paper provides an overview of the process of 4H-SiC pn junction fabrication and characterization. The samples used in this study were fabricated in a resistively heated horizontal hot-wall Chemical Vapor Deposition reactor. The homo-epitaxial layers were grown on commercially available 4H-SiC substrates (Cree). In order to obtain p-type epilayers, they were intentionally doped with aluminum. In this work, we present our recently developed 4H-SiC pn junctions fabrication and characterization results. The ohmic contacts were formed using evaporation, etching, lift-off and high temperature annealing. Current-voltage characteristics of the devices were demonstrated.
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Andrzej Kociubinski, Mariusz Duk, Dominika Teklinska, Norbert Kwietniewski, Mariusz Sochacki, Michal Borecki, "Fabrication and characterization of epitaxial 4H-SiC pn junctions", Proc. SPIE 9228, Optical Fibers and Their Applications 2014, 922804 (12 May 2014); doi: 10.1117/12.2061287; https://doi.org/10.1117/12.2061287
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