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14 June 1988 Fabrication Of 0.5 µm Poly-Si And Aluminum Interconnections By Means Of X-Ray Lithography And Plasma Etching
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Abstract
This paper describes the replication and transfer of half-μm patterns into poly-Si and aluminum layers by means of x-ray lithography with synchrotron radiation and subsequent dry etching. The results show that plasma etching in a parallel plate reactor with powered upper electrode, working in the high pressure region is capable of anisotropic replication of half-μm features. Two novolak-based x-ray sensitive resists, Hunt HPR 204 and Hunt WX 242, were used as an etch mask. The processes employed were CC14/He and C12/BC1J/CC14/N2 recipes for structuring poly-Si and aluminum respectively. The optimization of the Al etch recipe showed that the linewidth loss can be reduced below 0.05 pm by proper adjustment of the nitrogen flow.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G Zwicker, L. Csepregi, H.-L. Huber, W Windbracke, and A Heuberger "Fabrication Of 0.5 µm Poly-Si And Aluminum Interconnections By Means Of X-Ray Lithography And Plasma Etching", Proc. SPIE 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII, (14 June 1988); https://doi.org/10.1117/12.945632
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