Microcircuit Modification Using Focused Ion Beams

B W Ward; N. P Economou; D. C Shaver; J E. Ivory; M. L Ward; L. A, Stern

doi:10.1117/12.945636

14 June 1988 Microcircuit Modification Using Focused Ion Beams

B W Ward, N. P Economou, D. C Shaver, J E. Ivory, M. L Ward, L. A, Stern

Proceedings Volume 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII; (1988) https://doi.org/10.1117/12.945636
Event: Medical Imaging II, 1988, Newport Beach, CA, United States

Abstract

Focused-ion-beam (FIB) microcircuit modification is a maturing technology which provides an accurate method of modifying the metal levels of an in-process or completed integrated circuit. New FIB processes are being developed which facilitate submicrometer conductor disconnects and conductor creation. We present a description of the key elements of an FIB system designed for this application and provide results of the machine's operation.

Citation Download Citation

B W Ward, N. P Economou, D. C Shaver, J E. Ivory, M. L Ward, and L. A, Stern "Microcircuit Modification Using Focused Ion Beams", Proc. SPIE 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII, (14 June 1988); https://doi.org/10.1117/12.945636

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