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14 June 1988 Submicron E-Beam Lithography Utilizing A Positive Novolac-Based Resist
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Abstract
A positive novolac-based resist, WX-214, developed by Olin Hunt Chemical, has been investigated for use with the commercial electron beam lithography systems, AEBLE 150 and MEBES® III. The WX-214 yielded a sensitivity of 16 pC/cm2, a high resolution of 0.25μm lines and spaces, and an excellent dry etching resistance for pattern transfer. The results on the characterization of the resist and the development of a process for thin and thick films are presented.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patrick P Tang "Submicron E-Beam Lithography Utilizing A Positive Novolac-Based Resist", Proc. SPIE 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII, (14 June 1988); https://doi.org/10.1117/12.945644
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