17 October 2014 Innovative and water based stripping approach for thick and bulk photoresists
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Proceedings Volume 9231, 30th European Mask and Lithography Conference; 92310U (2014) https://doi.org/10.1117/12.2069941
Event: 30th European Mask and Lithography Conference, 2014, Dresden, Germany
Abstract
The usage of phase fluid based stripping agents to remove photoresists from silicon substrates was studied. Photoresists are required for many silicon based technologies such as MEMS patterning, 3D-Integration or frontend and backend of line semiconductor applications [1]. Although the use of resists is very common, their successful integration often depends on the ability to remove the resist after certain processing steps. On the one hand the resist is changing during subsequent process steps that can cause a thermally activated cross-linking which increases the stripping complexity. Resist removal is also challenging after the formation of a hard polymer surface layer during plasma or implant processes which is called skin or crust [2]. On the other hand the choice of stripping chemistry is often limited due to the presence of functional materials such as metals which can be damaged by aggressive stripping chemistries [3].
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Matthias Rudolph, Matthias Rudolph, Dirk Schumann, Dirk Schumann, Xaver Thrun, Xaver Thrun, Silvio Esche, Silvio Esche, Christoph Hohle, Christoph Hohle, } "Innovative and water based stripping approach for thick and bulk photoresists", Proc. SPIE 9231, 30th European Mask and Lithography Conference, 92310U (17 October 2014); doi: 10.1117/12.2069941; https://doi.org/10.1117/12.2069941
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