21 August 2014 MOCVD optimized growth for laser diodes emitting at 980nm via photoluminescence
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Proceedings Volume 9233, International Symposium on Photonics and Optoelectronics 2014; 92330J (2014) https://doi.org/10.1117/12.2069135
Event: International Symposium on Photonics and Optoelectronics (SOPO 2014), 2014, Suzhou, China
Abstract
We have investigated different growth conditions of AlGaAs and InGaAs quantum wells (QWs) by metal organic chemical vapor deposition (MOCVD) for applications in high-power laser diodes emitting at 980nm. According to different experimental results measured by Photoluminescence (PL), we optimized the growth conditions. Growth temperature, V/III ratio, growth interruption and spacer time have been studied in detail. We have found the optimal growth conditions for laser diodes emitting at 980nm grown by metal organic chemical vapor deposition (MOCVD). As for our experiments, the best suitable growth temperature of AlGaAs and InGaAs QWs was 700°C and 600°C, respectively. The growth procedure of laser diodes should include growth interruption and spacer layers surrounding QWs. V/III ratio was about 130 during the growth of QWs.
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Jianjun Li, Jianjun Li, Linjie He, Linjie He, Shengjie Lin, Shengjie Lin, Jun Han, Jun Han, Jun Deng, Jun Deng, } "MOCVD optimized growth for laser diodes emitting at 980nm via photoluminescence", Proc. SPIE 9233, International Symposium on Photonics and Optoelectronics 2014, 92330J (21 August 2014); doi: 10.1117/12.2069135; https://doi.org/10.1117/12.2069135
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