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21 October 2014 Performance of GFIS mask repair system for various mask materials
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We have developed a new focused ion beam (FIB) technology using a gas field ion source (GFIS) for mask repair. Meanwhile, since current high-end photomasks do not have high durability in exposure nor cleaning, some new photomask materials are proposed. In 2012, we reported that our GFIS system had repaired a representative new material “A6L2”. It is currently expected to extend the application range of GFIS technology for various new materials and various defect shapes. In this study, we repaired a single bridge, a triple bridge and a missing hole on a phase shift mask (PSM) of “A6L2”, and also repaired single bridges on a binary mask of molybdenum silicide (MoSi) material “W4G” and a PSM of high transmittance material “SDC1”. The etching selectivity between those new materials and quartz were over 4:1. There were no significant differences of pattern shapes on scanning electron microscopy (SEM) images between repair and non-repair regions. All the critical dimensions (CD) at repair regions were less than +/-3% of those at normal ones on an aerial image metrology system (AIMS). Those results demonstrated that GFIS technology is a reliable solution of repairing new material photomasks that are candidates for 1X nm generation.
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Fumio Aramaki, Tomokazu Kozakai, Osamu Matsuda, Anto Yasaka, Shingo Yoshikawa, Koichi Kanno, Hiroyuki Miyashita, and Naoya Hayashi "Performance of GFIS mask repair system for various mask materials", Proc. SPIE 9235, Photomask Technology 2014, 92350F (21 October 2014);

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