8 October 2014 Negative tone development process for ArF immersion extension
Author Affiliations +
Abstract
A negative tone imaging with application of new developer to conventional ArF immersion resist materials is proposed for narrow trench pattern formation, which is effective to the double trench process that is one of the candidates of double patterning process for semiconductor devices below 20nm node. Significantly better resolution on narrow trench pattern and small CH pattern was observed with this negative tone development compared to positive tone development. These results suggest that this negative tone development process is one of the promising candidates for double trench process.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kosuke Koshijima, Kosuke Koshijima, Michihiro Shirakawa, Michihiro Shirakawa, So Kamimura, So Kamimura, Keita Katou, Keita Katou, } "Negative tone development process for ArF immersion extension", Proc. SPIE 9235, Photomask Technology 2014, 92350O (8 October 2014); doi: 10.1117/12.2072470; https://doi.org/10.1117/12.2072470
PROCEEDINGS
6 PAGES


SHARE
RELATED CONTENT


Back to Top