8 October 2014 Resist charging effect correction function qualification for photomasks production
Author Affiliations +
We quantitatively evaluate Nuflare’s latest resist charging effect correction (CEC) model for advanced photomask production using e-beam lithography. Functionality of this CEC model includes the simulation of static and timedependent charging effects together with an improved calibration method. CEC model calibration is performed by polynomial fitting of image placement distortions induced by various beam scattering effects on a special test design with writing density variations. CEC model parameters can be fine tuned for different photomask blank materials facilitating resist charging compensation maps for different product layers. Application of this CEC model into production yields a significant reduction in photomask image placement (IP), as well as improving photomask overlay between critical neighbouring layers. The correlations between IP improvement facilitated by this CEC model and single mask parameters are presented and discussed. The layer design specifics, resist and blank materials, coupled with their required exposure parameters are observed to be the major influences on CEC model performance.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vadim Sidorkin, Vadim Sidorkin, Michael Finken, Michael Finken, Timo Wandel, Timo Wandel, Noriaki Nakayamada, Noriaki Nakayamada, G. R. Cantrell, G. R. Cantrell, } "Resist charging effect correction function qualification for photomasks production", Proc. SPIE 9235, Photomask Technology 2014, 92350Z (8 October 2014); doi: 10.1117/12.2066126; https://doi.org/10.1117/12.2066126


Benchmarking study of 3D mask modeling for 2X and 1X...
Proceedings of SPIE (April 12 2013)
Overlay tool comparison for sub-130-nm technologies
Proceedings of SPIE (July 16 2002)
Propagation of APC models across product boundaries
Proceedings of SPIE (April 29 2004)
A mask manufacturer’s perspective on maskless lithography
Proceedings of SPIE (November 05 2005)
SEM-contour based mask modeling
Proceedings of SPIE (March 07 2008)

Back to Top