8 October 2014 EUV mask black border evolution
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Abstract
The black border is a frame created by removing all the multilayers on the EUV mask in the region around the chip. It is created to prevent exposure of adjacent fields when printing an EUV mask on a wafer. Papers have documented its effectiveness. As the technology transitions into manufacturing, the black border must be optimized from the initial mask making process through its life. In this work, the black border is evaluated in three stages: the black border during fabrication, the final sidewall profile, and extended lifetime studies. This work evaluates the black border through simulations and physical experiments. The simulations address concerns for defects and sidewall profiles. The physical experiments test the current black border process. Three masks are used: one mask to test how black border affects the image placement of features on mask and two masks to test how the multilayers change through extended cleans. Data incorporated in this study includes: registration, reflectivity, multilayer structure images and simulated wafer effects. By evaluating the black border from both a mask making perspective and a lifetime perspective, we are able to characterize how the structure evolves. The mask data and simulations together predict the performance of the black border and its ability to maintain critical dimensions on wafer. In this paper we explore what mask changes occur and how they will affect mask use.
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Christina Turley, Christina Turley, Ravi Bonam, Ravi Bonam, Emily Gallagher, Emily Gallagher, Jonathan Grohs, Jonathan Grohs, Masayuki Kagawa, Masayuki Kagawa, Louis Kindt, Louis Kindt, Eisuke Narita, Eisuke Narita, Steven Nash, Steven Nash, Yoshifumi Sakamoto, Yoshifumi Sakamoto, } "EUV mask black border evolution", Proc. SPIE 9235, Photomask Technology 2014, 923513 (8 October 2014); doi: 10.1117/12.2070047; https://doi.org/10.1117/12.2070047
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