8 October 2014 The feasibility of EUV lithography for printing circuits with 4 nm feature size
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Abstract
One of the main concerns about EUV lithography is whether or not it can be extended to very high numerical aperture. In this paper, we show by rigorous electromagnetic simulation that there is a very interesting and hitherto undiscovered electromagnetic phenomenon occurring in the 4-nm feature size regime. This new phenomenon can be exploited to enable the printing of 4-nm lines and spaces with excellent aerial-image contrast and peak intensity. Also, we show how it is possible to print a logic circuit containing a general 2D pattern with 4-nm feature size, using suitable absorber and multilayer tuning, reduction ratio, exposure technique and optical proximity correction.
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Michael Yeung, Michael Yeung, Eytan Barouch, Eytan Barouch, } "The feasibility of EUV lithography for printing circuits with 4 nm feature size", Proc. SPIE 9235, Photomask Technology 2014, 923514 (8 October 2014); doi: 10.1117/12.2069376; https://doi.org/10.1117/12.2069376
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