17 October 2014 Particle reduction and control in EUV etching process
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Abstract
As the device design rule shrinks, photomask manufacturers need to have advanced defect controllability during the ARC (Anti-Reflection Coating) and ABS (Absorber) etch in an EUV (extreme ultraviolet) mask. Therefore we studied etching techniques of EUV absorber film to find out the evasion method of particle generation. Usually, Particles are generated by plasma ignition step in etching process. When we use the standard etching process, ARC and ABS films are etched step by step. To reduce the particle generation, the number of ignition steps need to decrease. In this paper, we present the experimental results of in-situ EUV dry etching process technique for ARC and ABS, which reduces the defect level significantly. Analysis tools used for this study are as follows; TEM (for cross-sectional inspection) , SEM (for in-line monitoring ) and OES (for checking optical emission spectrum)
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JeaYoung Jun, JeaYoung Jun, TaeJoong Ha, TaeJoong Ha, SangPyo Kim, SangPyo Kim, DongGyu Yim, DongGyu Yim, "Particle reduction and control in EUV etching process", Proc. SPIE 9235, Photomask Technology 2014, 92351E (17 October 2014); doi: 10.1117/12.2066297; https://doi.org/10.1117/12.2066297
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