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8 October 2014 Development and characterization of advanced phase-shift mask blanks for 14nm node and beyond
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Recently, the development of semiconductor process for 14nm node and beyond is in progress. The mask-making process demands higher resolution and CD accuracy to meet requirements. Current conventional ArF PSM has several problems such as higher 3D effect and higher loading effect due to the thicker film. These problems cause the CD performance degradation. This study is about the manufacturing of advance ArF PSM, which has thinner phase shift layer and higher etch rate Cr absorber film. The thickness of phase shift film is less than 60nm and the total etch-time for the Cr absorber film is reduced more than 30%. The mask CD performance of this new blank was evaluated in terms of CD uniformity, CD linearity, pattern resolution, and loading effect and so on. Adapting to this new blank, we can achieve better CD performance by reducing the loading effect. In addition, the chemical durability and ArF exposure durability were also improved. In conclusion, the mask-making process margin was extended by using this new blank, and it is expected that we can achieve the required specifications for 14nm node and beyond.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chang-Jun Kim, Kyu-Jin Jang, Min-Ki Choi, Chul-Kyu Yang, Jae-Chul Lee, Jong-Keun Lee, Byung-Sun Kang, Jong-Hwa Lee, Cheol Shin, and Kee-Soo Nam "Development and characterization of advanced phase-shift mask blanks for 14nm node and beyond", Proc. SPIE 9235, Photomask Technology 2014, 92351L (8 October 2014);

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