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16 September 2014 Efficient model-based dummy-fill OPC correction flow for deep sub-micron technology nodes
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Dummy fill insertion is a necessary step in modern semiconductor technologies to achieve homogeneous pattern density per layer. This benefits several fabrication process steps including but not limited to Chemical Mechanical Polishing (CMP), Etching, and Packaging. As the technology keeps shrinking, fill shapes become more challenging to pattern and require aggressive model based optical proximity correction (MBOPC) to achieve better design fidelity. MBOPC on Fill is a challenge to mask data prep runtime and final mask shot count which would affect the total turnaround time (TAT) and mask cost. In our work, we introduce a novel flow that achieves a robust and computationally efficient fill handling methodology during mask data prep, which will keep both the runtime and shot count within their acceptable levels. In this flow, fill shapes undergo a smart MBOPC step which improves the final wafer printing quality and topography uniformity without degrading the final shot count or the OPC cycle runtime. This flow is tested on both front end of line (FEOL) layers and backend of line (BEOL) layers, and results in an improved final printing of the fill patterns while consuming less than 2% of the full MBOPC flow runtime.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ayman Hamouda and Mohamed Salama "Efficient model-based dummy-fill OPC correction flow for deep sub-micron technology nodes", Proc. SPIE 9235, Photomask Technology 2014, 92351W (16 September 2014);


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