2 October 2014 Assessing the viability of multi-electron beam wafer inspection for sub-20nm defects
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Proceedings Volume 9236, Scanning Microscopies 2014; 92360E (2014) https://doi.org/10.1117/12.2069302
Event: SPIE Scanning Microscopies, 2014, Monterey, California, United States
Abstract
SEMATECH has initiated a program to accelerate the development and commercialization of multi-electron beam based technologies as successor for wafer defect inspection in high volume semiconductor manufacturing. This paper develops the basic electron-optical performance requirements and establishes criteria for tool specifications. The performance variations within a large array of electron beams must be minimal in order to maximize defect capture rates while simultaneously minimizing false counts, so a series of experimental evaluations are described to quantify the random and systematic variations in beam current, spot size, detector channel noise level, and defect sensitivity.
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Brad Thiel, Brad Thiel, Michael Lercel, Michael Lercel, Benjamin Bunday, Benjamin Bunday, Matt Malloy, Matt Malloy, "Assessing the viability of multi-electron beam wafer inspection for sub-20nm defects", Proc. SPIE 9236, Scanning Microscopies 2014, 92360E (2 October 2014); doi: 10.1117/12.2069302; https://doi.org/10.1117/12.2069302
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