2 October 2014 Assessing the viability of multi-electron beam wafer inspection for sub-20nm defects
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Proceedings Volume 9236, Scanning Microscopies 2014; 92360E (2014) https://doi.org/10.1117/12.2069302
Event: SPIE Scanning Microscopies, 2014, Monterey, California, United States
SEMATECH has initiated a program to accelerate the development and commercialization of multi-electron beam based technologies as successor for wafer defect inspection in high volume semiconductor manufacturing. This paper develops the basic electron-optical performance requirements and establishes criteria for tool specifications. The performance variations within a large array of electron beams must be minimal in order to maximize defect capture rates while simultaneously minimizing false counts, so a series of experimental evaluations are described to quantify the random and systematic variations in beam current, spot size, detector channel noise level, and defect sensitivity.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brad Thiel, Brad Thiel, Michael Lercel, Michael Lercel, Benjamin Bunday, Benjamin Bunday, Matt Malloy, Matt Malloy, "Assessing the viability of multi-electron beam wafer inspection for sub-20nm defects", Proc. SPIE 9236, Scanning Microscopies 2014, 92360E (2 October 2014); doi: 10.1117/12.2069302; https://doi.org/10.1117/12.2069302

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