Interface absorption versus film absorption in HfO2/SiO2 thin-film pairs in the near-ultraviolet and relation to pulsed-laser damage

S. Papernov; A. A. Kozlov; J. B. Oliver

doi:10.1117/12.2068241

31 October 2014 Interface absorption versus film absorption in HfO₂ SiO₂ thin-film pairs in the near-ultraviolet and the relation to pulsed-laser damage

S. Papernov, A. A. Kozlov, J. B. Oliver

Author Affiliations +

Proceedings Volume 9237, Laser-Induced Damage in Optical Materials: 2014; 92370Q (2014) https://doi.org/10.1117/12.2068241
Event: SPIE Laser Damage, 2014, Boulder, Colorado, United States

Abstract

Near-ultraviolet absorption in hafnium oxide and silica oxide thin-film pairs in a configuration strongly departing from the regular quarter-wave–thickness approach has been studied with the goal of separating film and interfacial contributions to absorption and pulsed laser damage. For this purpose, we manufactured a model HfO₂ SiO₂ thin-film coating containing seven HfO₂ layers separated by narrow SiO₂ layers and a single-layer HfO₂ film in one coating run. The two coatings were characterized by a one-wave total optical thickness for the HfO₂ material and similar E-field peak intensity inside the film. Absorption in the electron-beam–deposited films was measured using photothermal heterodyne imaging. By comparing absorption for the seven-layer and single-layer films, one can estimate the partial HfO₂ SiO₂ interface contribution. Relevance of obtained data to the thin-film pulsed-laser damage was verified by conducting 351-nm, nanosecond-laser–damage measurements and damage-morphology characterization using atomic force microscopy.

Citation Download Citation

S. Papernov, A. A. Kozlov, and J. B. Oliver "Interface absorption versus film absorption in HfO₂ SiO₂ thin-film pairs in the near-ultraviolet and the relation to pulsed-laser damage", Proc. SPIE 9237, Laser-Induced Damage in Optical Materials: 2014, 92370Q (31 October 2014); https://doi.org/10.1117/12.2068241

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