31 October 2014 Interface absorption versus film absorption in HfO2 SiO2 thin-film pairs in the near-ultraviolet and the relation to pulsed-laser damage
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Proceedings Volume 9237, Laser-Induced Damage in Optical Materials: 2014; 92370Q (2014); doi: 10.1117/12.2068241
Event: SPIE Laser Damage, 2014, Boulder, Colorado, United States
Abstract
Near-ultraviolet absorption in hafnium oxide and silica oxide thin-film pairs in a configuration strongly departing from the regular quarter-wave–thickness approach has been studied with the goal of separating film and interfacial contributions to absorption and pulsed laser damage. For this purpose, we manufactured a model HfO2 SiO2 thin-film coating containing seven HfO2 layers separated by narrow SiO2 layers and a single-layer HfO2 film in one coating run. The two coatings were characterized by a one-wave total optical thickness for the HfO2 material and similar E-field peak intensity inside the film. Absorption in the electron-beam–deposited films was measured using photothermal heterodyne imaging. By comparing absorption for the seven-layer and single-layer films, one can estimate the partial HfO2 SiO2 interface contribution. Relevance of obtained data to the thin-film pulsed-laser damage was verified by conducting 351-nm, nanosecond-laser–damage measurements and damage-morphology characterization using atomic force microscopy.
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S. Papernov, A. A. Kozlov, J. B. Oliver, "Interface absorption versus film absorption in HfO2 SiO2 thin-film pairs in the near-ultraviolet and the relation to pulsed-laser damage", Proc. SPIE 9237, Laser-Induced Damage in Optical Materials: 2014, 92370Q (31 October 2014); doi: 10.1117/12.2068241; http://dx.doi.org/10.1117/12.2068241
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KEYWORDS
Absorption

Silica

Coating

Interfaces

Thin films

Near ultraviolet

Oxides

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